Product Summary
The CMOS BQ2201SNTRG4 SRAM Nonvolatile Controller Unit provides all necessary functions for converting a standard CMOS SRAM into nonvolatile read/write memory. During a power failure, the external SRAM is switched from the VCC supply to one of two 3V backup sup-plies. On a subsequent power-up, the BQ2201SNTRG4 is write-protected until a power-valid condition exists. The BQ2201SNTRG4 is footprint- and timing-compatible with industry stan-dardswith the added benefit of a chip-enable propagation delay of less than 10ns.
Parametrics
BQ2201SNTRG4 absolute maximum ratings: (1)DC voltage applied on VCCrelative to VSS: -0.3 to 7.0 V; (2)DC voltage applied on any pin excluding VCC relative to VSS:-0.3 to 7.0 V; (3)Operating temperature: 0 to +70 ℃ or -40 to +85 ℃ ; (4)Storage temperature:-55 to +125 ℃; (5)Temperature under bias:-40 to +85 ℃; (6)Soldering temperature:260 ℃ ; (7)VOUTcurrent:200 mA.
Features
BQ2201SNTRG4 features: (1)Power monitoring and switching for 3-volt battery-backup applications; (2)Write-protect control; (3)3-volt primary cell inputs; (4)Less than 10ns chip-enable propagation delay; (5)5% or 10% supply operation.
Diagrams
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BQ2201SNTRG4 |
Texas Instruments |
Supervisory Circuits NONVOLATILE SRAM Cntrlr |
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bq2201 |
Other |
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BQ2201PN |
Texas Instruments |
Supervisory Circuits SRAM Nonvolatile Controller IC |
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BQ2201PNE4 |
Texas Instruments |
Supervisory Circuits SRAM Nonvolatile Controller IC |
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BQ2201SN-NG4 |
Texas Instruments |
Supervisory Circuits SRAM Nonvolatile Controller IC |
Data Sheet |
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BQ2201SN-NTR |
Texas Instruments |
Supervisory Circuits SRAM Nonvolatile Controller IC |
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BQ2201SN-NTRG4 |
Texas Instruments |
Supervisory Circuits SRAM Nonvolatile Controller IC |
Data Sheet |
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